maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 200 ma power dissipation p d 100 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 1250 c/w electrical characteristics: (t a =25c unless otherwise noted) npn pnp symbol test conditions min typ typ max units i cev v ce =30v, v eb =3.0v 50 na bv cbo i c =10a 60 115 90 v bv ceo i c =1.0ma 40 60 55 v bv ebo i e =10a 6.0 7.5 7.9 v v ce(sat) i c =10ma, i b =1.0ma 0.057 0.050 0.100 v v ce(sat ) i c =50ma, i b =5.0ma 0.100 0.100 0.200 v v be(sat ) i c =10ma, i b =1.0ma 0.650 0.750 0.750 0.850 v v be(sat ) i c =50ma, i b =5.0ma 0.850 0.850 0.950 v cmbt3904e npn CMBT3906E pnp enhanced specification complementary femtomini tm silicon transistors sot-923 case central semiconductor corp. tm r0 (17-april 2007) description: the central semiconductor cmbt3904e (npn) and CMBT3906E (pnp) are general purpose transistors with enhanced specifications. these devices are ideal for applications where ultra small size and power dissipation are the prime requirements. packaged in the femtomini ? sot-923 package, these transistors provide performance characteristics suitable for the most demanding size constrained applications. ? ? enhanced specification. ? ? ? ? ? features ? very small package size ? 200ma collector current ? low v ce(sat) (0.1v typ @ 50ma) ? miniature 0.8 x 0.6 x 0.4mm ultra low height profile femto mini ? surface mount package marking codes: cmbt3904e: b CMBT3906E: g applications ? dc / dc converters ? voltage clamping ? protection circuits ? battery powered applications including: cell phones, digital cameras, pagers, pdas, laptop computers, etc.
central semiconductor corp. tm cmbt3904e npn CMBT3906E pnp enhanced specification complementary femtomini tm silicon transistors r0 (17-april 2007) npn pnp symbol test conditions min typ typ max units h fe v ce =1.0v, i c =0.1ma 90 240 130 h fe v ce =1.0v, i c =1.0ma 100 235 150 h fe v ce =1.0v, i c =10ma 100 215 150 300 h fe v ce =1.0v, i c =50ma 70 110 120 h fe v ce =1.0v, i c =100ma 30 50 55 f t v ce =20v, i c =10ma, f=100mhz 300 mhz c ob v cb =5.0v, i e =0, f=1.0mhz 4.0 pf c ib v be =0.5v, i c =0, f=1.0mhz 8.0 pf h ie v ce =10v, i c =1.0ma, f=1.0khz 1.0 12 k ? h re v ce =10v, i c =1.0ma, f=1.0khz 0.1 10 x10 -4 h fe v ce =10v, i c =1.0ma, f=1.0khz 100 400 h oe v ce =10v, i c =1.0ma, f=1.0khz 1.0 60 mhos nf v ce =5.0v, i c =100a, r s =1.0k ? , 4.0 db f=10hz to 15.7khz t d v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 ns t r v cc =3.0v, v be =0.5v, i c =10ma, i b1 =1.0ma 35 ns t s v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 200 ns t f v cc =3.0v, i c =10ma, i b1 =i b2 =1.0ma 50 ns sot-923 - mechanical outline lead code: 1) base 2) emitter 3) collector ? enhanced specification. electrical characteristics (continued) ? ? ?
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